About the role:
The successful candidate with relevant skills will carry out key tasks to meet project deadlines. They will work with the high-power chip technology development team to design, develop, and deliver advanced high-power chips to the market.
What you will do:
* Build a technology platform for power device (IGBT/FRD) design and new technology development to meet customer requirements in a manufacturable and cost-effective manner.
* Improve the overall performance, reliability, and robustness of existing devices.
* Perform TCAD process and device simulations, layout design, and create/maintain design and generation rules.
* Conduct engineering device tests (static, dynamic, reliability, etc.) and analyze data; manual testing may be involved.
* Collaborate with chip and other functional teams to ensure timely delivery.
* Train and develop the skills of team members to expand their capabilities.
* Experience in IGBT design for EV/HEV applications is preferred.
* Encourage and manage the production of technical publications and invention patents.
What you will need:
Hard Skills:
* Hands-on experience in power device design and technology development, including fine geometry trench and thin wafer technology; 12” wafer experience is a plus.
* Proficiency in TCAD process and device simulation.
* Understanding of power device physics, fabrication, and characterization principles.
* Knowledge in designing for reliability and robustness of power devices.
* Ability to resolve design and engineering issues effectively.
* More than 8 years of experience in IGBT (or FRD) design and/or processing.
* Proficient in reading and writing technical literature in English.
Soft Skills:
* Leadership skills in managing and leading project teams in a global, intercultural environment.
* Master’s degree or higher in Microelectronics or a related semiconductor field.
* Excellent communication skills in both spoken and written English.
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