Inserat online seit: 2 Juni
Aufgaben der Stelle
Role:
- Design of High Voltage Power MOSFETs and diodes in SiC and GaN Technologies
- Define device design and process platform specifics to meet design targets
- Perform TCAD process and device simulations, layout design
- Design rules definition and maintenance through generation of device designs
- Electrical characterization of prototypes, data analysis, and design debug
- Improving existing products and participate in next generation product portfolio discussions
- Novel device designs, Generate new Intellectual Property
Requirements:
- MS/PhD in Microelectronics, Solid State Physics or Electrical Engineering
- 5-8 years of experience in power MOSFET and IGBT design and/or fabrication
- Hands-on experience in power device technology and process development
- Proficiency in TCAD modelling and simulation tools (Synopsys or Silvaco Design Environment preferred), Layout design environment (e.g. Cadence, K-Layout, L-Edit)
- Develop physically productive simulation decks for a given power technology
- Understanding of substrate material and epitaxial growth, strong knowledge in power MOSFET device physics, fabrication and characterization principles
- Knowledge and experience in design for reliability and robustness, RBSOA (Reverse Bias Safe Operating Area) and SCSOA (Short Circuit Safe Operating Area)
- Familiarity of Qualification and Reliability Standards such as JEDEC and AEC-Q101
- Anticipate, analyze, and implement systematic problem-solving techniques for device design related issues
