Role:
* Design of High Voltage Power MOSFETs and diodes in SiC and GaN Technologies
* Define device design and process platform specifics to meet design targets
* Perform TCAD process and device simulations, layout design
* Design rules definition and maintenance through generation of device designs
* Electrical characterization of prototypes, data analysis, and design debug
* Improving existing products and participate in next generation product portfolio discussions
* Novel device designs, Generate new Intellectual Property
Requirements:
* MS/PhD in Microelectronics, Solid State Physics or Electrical Engineering
* 5-8 years of experience in power MOSFET and IGBT design and/or fabrication
* Hands-on experience in power device technology and process development
* Proficiency in TCAD modelling and simulation tools (Synopsys or Silvaco Design Environment preferred), Layout design environment (e.g. Cadence, K-Layout, L-Edit)
* Develop physically productive simulation decks for a given power technology
* Understanding of substrate material and epitaxial growth, strong knowledge in power MOSFET device physics, fabrication and characterization principles
* Knowledge and experience in design for reliability and robustness, RBSOA (Reverse Bias Safe Operating Area) and SCSOA (Short Circuit Safe Operating Area)
* Familiarity of Qualification and Reliability Standards such as JEDEC and AEC-Q101
* Anticipate, analyze, and implement systematic problem-solving techniques for device design related issues