<p><strong>Role:</strong></p><ul><li>Design of High Voltage Power MOSFETs and diodes in SiC and GaN Technologies</li><li>Define device design and process platform specifics to meet design targets</li><li>Perform TCAD process and device simulations, layout design</li><li>Design rules definition and maintenance through generation of device designs</li><li>Electrical characterization of prototypes, data analysis, and design debug</li><li>Improving existing products and participate in next generation product portfolio discussions</li><li>Novel device designs, Generate new Intellectual Property</li></ul><p><strong>Requirements:</strong></p><ul><li>MS/PhD in Microelectronics, Solid State Physics or Electrical Engineering</li><li>5-8 years of experience in power MOSFET and IGBT design and/or fabrication</li><li>Hands-on experience in power device technology and process development</li><li>Proficiency in TCAD modelling and simulation tools (Synopsys or Silvaco Design Environment preferred), Layout design environment (e.g. Cadence, K-Layout, L-Edit)</li><li>Develop physically productive simulation decks for a given power technology</li><li>Understanding of substrate material and epitaxial growth, strong knowledge in power MOSFET device physics, fabrication and characterization principles</li><li>Knowledge and experience in design for reliability and robustness, RBSOA (Reverse Bias Safe Operating Area) and SCSOA (Short Circuit Safe Operating Area)</li><li>Familiarity of Qualification and Reliability Standards such as JEDEC and AEC-Q101</li><li>Anticipate, analyze, and implement systematic problem-solving techniques for device design related issues</li></ul><p></p>