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Masterthesis: gan-based rf power devices & circuits (freiburg, de, 79108)

Freiburg im Breisgau
Abschlussarbeit
Fraunhofer-Gesellschaft
Inserat online seit: Veröffentlicht vor 22 Std.
Beschreibung

At the Fraunhofer Institute for Applied Solid State Physics IAF we know our technologies like the back of our hand. Because we are one of the few scientific institutions worldwide to conduct research along the entire semiconductor value chain and on tailor-made synthetic diamonds. Whether high-frequency circuits for communications technology, voltage converter modules for electromobility, laser systems for measurement processes, or innovative hardware and software for quantum computers and quantum sensors: we develop tomorrow’s technology in-house for a sustainable and secure society. When will you join us?

In our microelectronics department we assign a master thesis in the field of GaN power electronics.



What you do:

Master’s thesis topics in the area of RF power devices and circuits are based on our in-house GaN HEMT technologies and reflect our research interests, which currently include the following areas:

* Packaged / integrated high-power amplifiers with output power levels in the kW-range.
* Integrated power amplifiers (e.g. Doherty PAs, Wideband PAs) for SatCom or 5G/6G.
* Multi-functional transceiver MMICs and their individual building blocks (e.g., LNAs, PAs, mixers, frequency multipliers, phase shifters, attenuators, power detectors, …).
* Design and optimization of active devices (diodes, HEMTs) for emerging applications and frequency bands.
* Characterization and thermal / electrical modeling of active and passive devices.



What you bring along:

* You are enrolled as a student in physics, electrical engineering or a comparable degree programme.
* You are interested in challenging scientific content from experiment and theory.
* You enjoy scientific work.
* The ability to work in a team, openness and motivation to work independently and purposefully round off your profile.



What we offer:

* A thesis at Fraunhofer IAF allows you to apply the knowlege you have acquired during your studies to specific research projects
* With us, you can work scientifically and gain project experience at the same time
* We offer modern laboratory equipment, supervision by experienced scientists and a variety of opportunities for further education
* By organising your working hours flexibly to suit your studies, we enable you to manage your time freely and independently
* There is a Frelo station (bike hire system) and a car park with an e-charging station right next to the institute



We value and promote the diversity of our employees' skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity. Severely disabled people will be given preference if equally qualified.

The position is initially limited to 6 months.

We value and promote the diversity of our employees' skills and therefore welcome all applications, regardless of age, gender, nationality, ethnic and social background, religion, ideology, disability, sexual orientation, or identity. Severely disabled persons with equal qualifications will be given preference.

Our tasks are varied and adaptable—for applicants with disabilities, we work together to find solutions that optimally promote their skills. The same applies if they do not meet all profile requirements due to a disability.

Ready for change? Then apply now and make a difference! After we receive your online application (cover letter, a current certificate of enrolment and your certificates), you will receive an automatic confirmation of receipt. We will then contact you as soon as possible and let you know how to proceed. Do you have questions about the position, the application process, or accessibility? Do you need support?
Our recruiter Maria Boerner is here for you: recruiting@iaf.fraunhofer.de, phone +49 761 5159-195.





Fraunhofer Institute for Applied Solid State Physics IAF
Tullastrasse 72
79108 Freiburg

Fraunhofer-Institut für Angewandte Festkörperphysik IAF

www.iaf.fraunhofer.de


Kennziffer: 78402 Bewerbungsfrist:

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Home > Stellenangebote > Masterthesis: GaN-Based RF Power Devices & Circuits (Freiburg, DE, 79108)

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